ADVANTAGE OF STRAINED QUANTUM WIRE LASERS

被引:35
|
作者
UENO, S
MIYAKE, Y
ASADA, M
机构
[1] Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, Tokyo
关键词
STRAINED SUPERLATTICE; QUANTUM WIRE; HOLE EFFECTIVE MASS;
D O I
10.1143/JJAP.31.286
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is shown theoretically that the strained quantum wire (QW) lasers have gain and differential gain much larger than those of unstrained QW lasers. Application of the strain effect to quantum wire structure leads to small hole effective mass which induces a large separation between quantized energy levels in the valence band. Thus holes concentrate efficiently into fundamental level, giving rise to increase of gain and differntial gain. The wire width at which the energy separation is comparable to the thermal energy and the relaxation broadening is 2.5 times that of the unstrained case. Broadening of energy levels due to wire width fluctuation can be reduced 1/2 times that of the unstrained case.
引用
收藏
页码:286 / 287
页数:2
相关论文
共 50 条
  • [31] FREQUENCY LIMITATIONS OF QUANTUM-WIRE LASERS
    TIWARI, S
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 471 - 476
  • [32] Recombination in InGaAs/GaAs quantum wire lasers
    DeVittorio, M
    Rinaldi, R
    Passaseo, A
    DeGiorgi, M
    Lomascolo, M
    Visconti, P
    Cingolani, R
    Taurino, A
    Catalano, M
    DeCaro, L
    Tapfer, L
    SOLID STATE COMMUNICATIONS, 1999, 112 (01) : 55 - 60
  • [33] Coupled terahertz quantum cascade wire lasers
    Ertl, Marie C.
    Jaidl, Michael
    Limbacher, Benedikt
    Theiner, Dominik
    Giparakis, Miriam
    Isceri, Stefania
    Beiser, Maximilian
    Andrews, Aaron Maxwell
    Strasser, Gottfried
    Darmo, Juraj
    Unterrainer, Karl
    APPLIED PHYSICS LETTERS, 2024, 125 (12)
  • [34] SINGLE QUANTUM WIRE SEMICONDUCTOR-LASERS
    KAPON, E
    SIMHONY, S
    BHAT, R
    HWANG, DM
    APPLIED PHYSICS LETTERS, 1989, 55 (26) : 2715 - 2717
  • [35] Quantum wire and dot lasers and related technologies
    Bimberg, D
    15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST, 1996, : 5 - 6
  • [36] Room temperature operation of 1.5 μm InAsP/InP strained quantum wire DFB lasers fabricated by mass transport method
    Univ of Tokyo, Tokyo, Japan
    Conf Proc Int Conf Indium Phosphide and Relat Mater, (17-20):
  • [37] Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP-InP quantum-wire lasers
    Haque, A
    Maruyama, T
    Yagi, H
    Sano, T
    Dhanorm, P
    Arai, S
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (09) : 1344 - 1351
  • [38] Rashba effect in strained InGaAs/InP quantum wire structures
    Schaepers, Th.
    Knobbe, J.
    van der Hart, A.
    Hardtdegen, H.
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2003, 4 (01) : 19 - 25
  • [39] STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE LASERS
    COLEMAN, JJ
    THIN SOLID FILMS, 1992, 216 (01) : 68 - 71
  • [40] Characteristic analysis of InGaAs/InGaAsP strained quantum well lasers
    Ma, CS
    Han, CH
    Liu, SY
    INTERNATIONAL JOURNAL OF OPTOELECTRONICS, 1997, 11 (04): : 263 - 270