VERTICAL INTEGRATION OF A GAAS/ALGAAS QUANTUM-WELL LASER AND A LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTOR

被引：5
|
作者：
TSANG, JS [1 ]
LEE, CP [1 ]
TSAI, KL [1 ]
CHEN, HR [1 ]
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30050,TAIWAN
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 05期
关键词：
INTEGRATED OPTOELECTRONICS; SEMICONDUCTOR LASERS; INFRARED DETECTORS; PHOTODETECTORS;
D O I：
10.1049/el:19940295
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A short-wavelength (approximately 0.8mum) GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser has been monolithically integrated with a long-wavelength (approximately 8mum) GaAs/AlGaAs multiple-quantum-well infra-red photodetector on a semi-insulating GaAs substrate by molecular beam epitaxy. The vertical integration method is used and the combined structure is a pinin structure. Both the laser and detector exhibit excellent characteristics. At room temperature, the ridge waveguide laser has an extremely low threshold current of 25 mA and a differential quantum efficiency above 65% with a stripe width of 20mum. The quantum-well detector has a peak response at 8mum and a responsivity of 0.7A/W.
引用
收藏
页码：450 / 451
页数：2
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