ELECTRON BUNCHING IN HIGH-POWER WIDEBAND KLYSTRONS WITH HIGH-EFFICIENCY

被引：0
|
作者：
KANAVETS, VI
SANDALOV, AN
SLEPKOV, AI
TEREBILOV, AV
机构：
来源：
RADIOTEKHNIKA I ELEKTRONIKA | 1978年 / 23卷 / 11期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2379 / 2390
页数：12
相关论文
共 50 条
  • [21] High-power, high-efficiency VCSELs pursue the goal
    D'Asaro, LA
    Seurin, JF
    Wynn, JD
    PHOTONICS SPECTRA, 2005, 39 (02) : 62 - +
  • [22] High-efficiency high-power semiconductor disc laser
    Brick, P
    Lutgen, S
    Albrecht, T
    Luft, J
    Späth, W
    HIGH-POWER FIBER AND SEMICONDUCTOR LASERS, 2003, 4993 : 50 - 56
  • [23] PERFORMANCE OF A HIGH-EFFICIENCY HIGH-POWER UHF KLYSTRON
    KONRAD, GT
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (03) : 1689 - 1691
  • [24] HIGH-POWER AND HIGH-EFFICIENCY GAAS AVALANCHE DIODES
    KIM, C
    ARMSTRON.LD
    APPLIED PHYSICS LETTERS, 1969, 14 (09) : 270 - &
  • [25] High-power annular beam klystrons
    Pasour, John
    Smithe, David
    Ludeking, Larry
    Friedman, Moshe
    IEEE International Conference on Plasma Science, 2000,
  • [26] High-Power Wideband Klystrons with Cavities on Higher Mode and Multibeam Drift Tubes
    Pugnin, Victor
    Yunakov, Alexey
    IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE, 2014, : 333 - 334
  • [27] RESULTS OF SIMULATIONS OF HIGH-POWER KLYSTRONS
    EPPLEY, K
    YU, S
    DROBOT, A
    HERRMANNSFELDT, W
    HANERFELD, H
    NIELSEN, D
    BRANDON, S
    MELENDEZ, R
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (05) : 2903 - 2905
  • [28] BREAKDOWN PHENOMENA IN HIGH-POWER KLYSTRONS
    VLIEKS, AE
    ALLEN, MA
    CALLIN, RS
    FOWKES, WR
    HOYT, EW
    LEBACQZ, JV
    LEE, TG
    IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1989, 24 (06): : 1023 - 1028
  • [29] Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%
    Baikov, Andrey Yu.
    Marrelli, Chiara
    Syratchev, Igor
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) : 3406 - 3412
  • [30] Compact High-Efficiency High-Power Wideband GaN Amplifier Supporting 395 MHz Instantaneous Bandwidth
    Zhu, Ning
    McLaren, Roy
    Roberts, Jeffrey S.
    Holmes, Damon G.
    Masood, Mir
    Jones, Jeffrey K.
    2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 1175 - 1178
12345