共 50 条
- [41] THE DEAL FAST-SURFACE STATES ARE PROBABLY DEEP-LEVEL IMPURITIES IN THE SEMICONDUCTOR IEEE CIRCUITS & DEVICES, 1985, 1 (06): : 17 - 22
- [42] INFLUENCE OF DEEP-LEVEL IMPURITIES ON ADMITTANCE OF GAP P+-N JUNCTIONS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02): : 535 - 542
- [43] INSTABILITY OF CURRENT IN EPITAXIAL GAAS FILMS COMPENSATED WITH SEVERAL DEEP-LEVEL IMPURITIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 489 - 490
- [45] EFFECT OF DEEP-LEVEL IMPURITIES ON THE GRAIN-BOUNDARY POTENTIAL OF A POLYCRYSTALLINE SEMICONDUCTOR PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 142 (01): : 117 - 125
- [48] Deep-level trapping centers in heterostructures for GaN field-effect transistors Journal of Communications Technology and Electronics, 2007, 52 : 819 - 825
- [50] Low frequency noise in nun and pnp polysilicon emitter bipolar junction transistors QUANTUM 1/F NOISE AND OTHER LOW FREQUENCY FLUCTUATIONS IN ELECTRONIC DEVICES, 1999, 466 : 105 - 122