MODEL OF HYDROGENATED AMORPHOUS-SILICON

被引:48
|
作者
GUTTMAN, L
机构
来源
PHYSICAL REVIEW B | 1981年 / 23卷 / 04期
关键词
D O I
10.1103/PhysRevB.23.1866
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1866 / 1874
页数:9
相关论文
共 50 条
  • [41] OXIDATION STUDIES OF HYDROGENATED AMORPHOUS-SILICON
    KELEMEN, SR
    GOLDSTEIN, Y
    ABELES, B
    SURFACE SCIENCE, 1982, 116 (03) : 488 - 500
  • [42] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
    OVERHOF, H
    BEYER, W
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (04): : 377 - 392
  • [43] OSCILLATION OF PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
    BUDAGUAN, BG
    AIVAZOV, AA
    STANOVOV, ON
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (37) : 6965 - 6970
  • [44] HYDROGENATED AMORPHOUS-SILICON - STREET,RA
    HOLMESSIEDLE, A
    NATURE, 1992, 358 (6382) : 117 - 118
  • [45] PHOTOCONDUCTIVITY SPECTROSCOPY OF HYDROGENATED AMORPHOUS-SILICON
    MITTIGA, A
    FIORINI, P
    FORNARINI, L
    PETRACCA, M
    GRILLO, G
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 70 (02): : 277 - 293
  • [46] THE NONRADIATIVE EFFICIENCY IN HYDROGENATED AMORPHOUS-SILICON
    FAN, J
    KAKALIOS, J
    PHILOSOPHICAL MAGAZINE LETTERS, 1991, 64 (04) : 235 - 240
  • [47] NITROGEN DOPING IN HYDROGENATED AMORPHOUS-SILICON
    SINGH, J
    BUDHANI, RC
    SOLID STATE COMMUNICATIONS, 1987, 64 (03) : 349 - 352
  • [48] SURFACE PHOTOVOLTAGE IN HYDROGENATED AMORPHOUS-SILICON
    KUMAR, S
    AGARWAL, SC
    APPLIED PHYSICS LETTERS, 1984, 45 (05) : 575 - 577
  • [49] DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    KAZANIN, MM
    MEZDROGINA, MM
    SOROKINA, KL
    FEOKTISTOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1199 - 1200
  • [50] REVERSIBLE DOPING OF HYDROGENATED AMORPHOUS-SILICON
    KONENKAMP, R
    WILD, E
    SOLID STATE COMMUNICATIONS, 1990, 73 (05) : 323 - 326