RBS AND ELLIPSOMETRIC INVESTIGATION OF AMORPHOUS GAAS-LAYERS

被引:1
|
作者
WENDLER, E
KULIK, M
WESCH, W
BACHMANN, T
机构
[1] Marie Curie-Sklodowska University, Lublin
来源
关键词
D O I
10.1002/pssa.2211260230
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:K105 / K108
页数:4
相关论文
共 50 条
  • [41] ELECTRIC PROPERTIES OF GAAS-LAYERS IRRADIATED BY H+ IONS
    BRUDNYI, VN
    KRIVOV, MA
    POTAPOV, AI
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1982, 25 (01): : 39 - 43
  • [42] BREAKDOWN OF CRYSTALLINITY IN LOW-TEMPERATURE-GROWN GAAS-LAYERS
    LILIENTALWEBER, Z
    SWIDER, W
    YU, KM
    KORTRIGHT, J
    SMITH, FW
    CALAWA, AR
    APPLIED PHYSICS LETTERS, 1991, 58 (19) : 2153 - 2155
  • [43] REACTIVE ION ETCHING DAMAGE TO GAAS-LAYERS WITH ETCH STOPS
    KNOEDLER, CM
    OSTERLING, L
    SHTRIKMAN, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (05): : 1573 - 1576
  • [44] RAPID THERMAL ANNEALING OF LOW-TEMPERATURE GAAS-LAYERS
    LILIENTALWEBER, Z
    LIN, XW
    WASHBURN, J
    SCHAFF, W
    APPLIED PHYSICS LETTERS, 1995, 66 (16) : 2086 - 2088
  • [45] MICROWAVE MESFETS FABRICATED IN GAAS-LAYERS GROWN ON SOS SUBSTRATES
    TURNER, GW
    CHOI, HK
    TSAUR, BY
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 460 - 462
  • [46] ELECTRONIC TRANSPORT IN PERIODICALLY DELTA-DOPED GAAS-LAYERS
    EGUES, JC
    BARBOSA, JC
    NOTARI, AC
    BASMAJI, P
    IORIATTI, L
    RANZ, E
    PORTAL, JC
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3678 - 3680
  • [47] MBE-GROWN GAAS-LAYERS BY CONTROLLING ARSENIC PRESSURE
    WANG, YH
    LIU, WC
    CHANG, CY
    LIAO, SA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C404 - C404
  • [48] ON THE SURFACE-DEFECTS OF MBE-GROWN GAAS-LAYERS
    WANG, YH
    LIU, WC
    LIAO, SA
    CHENG, KY
    CHANG, CY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 628 - 629
  • [49] RELATIONSHIP OF PROPERTIES OF MBE GROWN GAAS-LAYERS WITH GROWTH-CONDITIONS
    DUNG, PT
    LAZNICKA, M
    PAJASOVA, L
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1986, 36 (06) : 759 - +
  • [50] REDUCTION OF SURFACE-DEFECTS IN GAAS-LAYERS GROWN BY MBE
    KAWADA, H
    SHIRAYONE, S
    TAKAHASHI, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 550 - 556