RBS AND ELLIPSOMETRIC INVESTIGATION OF AMORPHOUS GAAS-LAYERS

被引：1
|
作者：
WENDLER, E
KULIK, M
WESCH, W
BACHMANN, T
机构：
[1] Marie Curie-Sklodowska University, Lublin
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 126卷 / 02期
关键词：
D O I：
10.1002/pssa.2211260230
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K105 / K108
页数：4
相关论文
共 50 条
  • [1] EPITAXIAL REGROWTH OF THIN AMORPHOUS GAAS-LAYERS
    GRIMALDI, MG
    PAINE, BM
    MAENPAA, M
    NICOLET, MA
    SADANA, DK
    APPLIED PHYSICS LETTERS, 1981, 39 (01) : 70 - 72
  • [2] INVESTIGATION OF ANTIPHASE INTERFACES IN GAAS-LAYERS
    VDOVIN, VI
    MILVIDSKII, MG
    YUGOVA, TG
    KRISTALLOGRAFIYA, 1991, 36 (03): : 738 - 743
  • [3] RBS and ellipsometric studies of near surface GaAs ion implanted layers
    Kulik, M
    Herec, J
    Romanek, J
    VACUUM, 2001, 63 (04) : 761 - 766
  • [4] INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION-IMPLANTED AMORPHOUS GAAS-LAYERS
    HEROLD, J
    WESCH, W
    GOTZ, G
    BARTSCH, H
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 184 - 186
  • [5] INVESTIGATION OF POSSIBILITY OF SHF GENERATION IN SUBMICRON GAAS-LAYERS
    KARAVAYEV, GF
    TKACHENKO, YA
    UIMANOV, YV
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1989, 32 (12): : 10 - 14
  • [6] APPLICATION OF SUPERLATTICES TO THE INVESTIGATION OF RESONANT DEFECT IN GAAS-LAYERS
    FENG, SL
    ZHOU, J
    LU, LW
    APPLIED PHYSICS LETTERS, 1995, 66 (17) : 2256 - 2258
  • [7] RBS-C and ellipsometric investigations of radiation damage in hot-implanted GaAs layers
    Kulik, M.
    Zuk, J.
    Drozdziel, A.
    Pyszniak, K.
    Komarov, F. F.
    Rzodkiewicz, W.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (04): : 340 - 343
  • [8] INVESTIGATION OF DEFECTS IN WEAKLY DAMAGED ION-IMPLANTED GAAS-LAYERS
    WESCH, W
    JORDANOV, A
    GARTNER, K
    GOTZ, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 445 - 448
  • [9] NOISE PROPERTIES OF EPITAXIAL GAAS-LAYERS
    AHMED, MK
    SOLID-STATE ELECTRONICS, 1990, 33 (09) : 1143 - 1149
  • [10] THE HALL PROFILING OF GAAS-LAYERS AND STRUCTURES
    LEITCH, AWR
    GOODMAN, SA
    VERMAAK, JS
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1991, 87 (06) : 267 - 270
12345