2-PHOTON INTERBAND TRANSITIONS AT CRITICAL POINTS IN SEMICONDUCTORS

被引：37

作者：

HASSAN, AR

机构：

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1970年 / 70卷 / 01期

关键词：

D O I：

10.1007/BF02712491

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：21 / &

共 50 条

[21] ONE-PHOTON AND 2-PHOTON MAGNETOOPTICAL TRANSITIONS IN INSB-TYPE SEMICONDUCTORS
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