2-PHOTON INTERBAND TRANSITIONS AT CRITICAL POINTS IN SEMICONDUCTORS

被引：37
|
作者：
HASSAN, AR
机构：
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1970年 / 70卷 / 01期
关键词：
D O I：
10.1007/BF02712491
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：21 / &
相关论文
共 50 条
  • [1] DRAG EFFECT IN INTERBAND 2-PHOTON TRANSITIONS IN SEMICONDUCTORS
    AGAFONOV, VG
    VALOV, PM
    RYVKIN, BS
    YAROSHETSKII, ID
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1868 - 1870
  • [2] ANALYSIS OF INDIRECT 2-PHOTON INTERBAND TRANSITIONS AND OF DIRECT 3-PHOTON TRANSITIONS IN SEMICONDUCTORS
    BASSANI, F
    HASSAN, AR
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B, 1972, B 7 (02): : 313 - &
  • [3] 2-PHOTON INTERBAND OPTICAL-TRANSITIONS IN SEMICONDUCTORS CONTAINING IMPURITY CENTERS
    PRODAN, VD
    ROZNERITSA, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 98 - 99
  • [4] 2-PHOTON INTERBAND ABSORPTION AT CRITICAL-POINTS IN THIN-LAYERS
    PILAT, M
    SOMMER, E
    ZALUZNY, M
    THIN SOLID FILMS, 1976, 37 (01) : 25 - 35
  • [5] INDIRECT 2-PHOTON TRANSITIONS IN SEMICONDUCTORS
    KOVARSKII, VA
    VITIU, EV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 354 - +
  • [6] DRAG OF CARRIERS IN 2-PHOTON INTERBAND-TRANSITIONS
    UDOD, LV
    MEIKE, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1343 - 1344
  • [7] 2-PHOTON INTERBAND-TRANSITIONS IN SEMICONDUCTORS IN A STATIC MAGNETIC-FIELD - NONLOCAL EFFECTS
    DESALVO, E
    GIRLANDA, R
    QUATTROPANI, A
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1985, 5 (01): : 63 - 76
  • [8] COMPOSITE MATRIX ELEMENT OF 2-PHOTON INTERBAND TRANSITION IN SEMICONDUCTORS
    MEDNIS, PM
    FIZIKA TVERDOGO TELA, 1972, 14 (09): : 2531 - +
  • [9] 2-PHOTON INTERBAND-TRANSITIONS IN CROSSED ELECTRIC AND MAGNETIC-FIELDS IN SEMICONDUCTORS - NONLOCAL EFFECTS
    DESALVO, E
    GIRLANDA, R
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1993, 15 (10): : 1321 - 1329
  • [10] 2-PHOTON INTERBAND ELECTRON TRANSITIONS VIA DEEP IMPURITY LEVELS IN NARROW-GAP SEMICONDUCTORS
    OSIPOV, EB
    OSIPOVA, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1418 - 1420
12345