RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS (RHETS) USING AN INGAAS/IN(ALGA)AS HETEROSTRUCTURE

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作者：
IMAMURA, K
MUTO, S
YOKOYAMA, N
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来源：
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL | 1988年 / 24卷 / 01期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：54 / 59
页数：6
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