A 1/2 FREQUENCY-DIVIDER USING RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS (RHETS)

被引：0
|
作者：
TAKATSU, M
IMAMURA, K
OHNISHI, H
MORI, T
ADACHIHARA, T
MUTO, S
YOKOYAMA, N
机构：
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 08期
关键词：
RESONANT-TUNNELING; HOT ELECTRON TRANSISTOR; FREQUENCY DIVIDER; CIRCUIT DESIGN; OPERATION TEST;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1/2 frequency divider using resonant-tunneling hot electron transistors (RHETs) has been proposed and demonstrated. The circuit make the best use of negative differential conductance, a feature of RHETs, and contains one half transistors than used in conventional circuits. The RHETs were fabricated using self-aligned InGaAs RHETs and WSiN thin-film resistors on a single chip. The RHETs have an i-InGaAlAs/i-InGaAs collector barrier that improves the current gain at low collector-base voltages. Circuit operation was confirmed at 77 K.
引用
收藏
页码：918 / 921
页数：4
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