ICOSAHEDRAL PHASE FORMATION IN HIGH SILICON AND MANGANESE CONTENT AL-MN-SI ALLOYS

被引：3

作者：

SRINIVAS, V

DUNLAP, RA

机构：

[1] Department of Physics, Dalhousie University, Halifax

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1990年 / 125卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/0921-5093(90)90260-A

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single-phase icosahedral AlMnSi alloys containing up to 30 at.% Mn and 33 at.% Si have been prepared directly by quenching from the melt. Alloys of the series Al70-xMnxSi30 (10≤x≤30), Al80-xMn20Six (6≤x≤40) and Al67-xMnxSi33 (28≤x≤32) were investigated. The regions of x for the formation of single-phase icosahedral alloys by direct quenching are x ≈ 26, x ≤ 20 and x ≈ 29 for the three series respectively. These alloys have quasi-lattice constants in the range 0.437-0.461 nm. Details of the structural properties of these alloys as well as their thermal stability as a function of composition are discussed. © 1990.

引用

页码：115 / 120

页数：6

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