BEATING IN RHEED OSCILLATIONS OBSERVED DURING MEE GROWTH OF ZNSE

被引:12
|
作者
GAINES, JM
PONZONI, CA
机构
[1] Philips Laboratories, North American Philips Corporation, Briarcliff Manor
关键词
D O I
10.1016/0039-6028(93)90599-F
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have made the first observations of beating in RHEED oscillations occurring during MEE growth of ZnSe. From measurements of the beat frequency, we have determined the amount of ZnSe deposited per MEE cycle as a function of Zn and Se deposition times and substrate temperature. A unique feature of the ZnSe oscillations is that the amount of ZnSe deposited in each MEE cycle saturates as the Zn and Se deposition times are increased. The saturated amount deposited per MEE cycle depends on the substrate temperature. For example, the saturated deposition amounts are 0.68 monolayers/cycle at 220-degrees-C and 0.39 monolayers/cycle at 340-degrees-C. We have also investigated thermally-induced and electron-beam-induced desorption by examining the effects, on the per-cycle deposition amounts, of varying the electron beam intensity, and of varying the time between Zn and Se depositions.
引用
收藏
页码:172 / 178
页数:7
相关论文
共 50 条
  • [41] Influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface
    Russian Acad of Sciences, Novosibirsk, Russia
    Thin Solid Films, 1-2 (183-187):
  • [42] COMBINED STUDY OF RHEED SPOT PROFILES AND INTENSITY OSCILLATIONS DURING MBE GROWTH OF GE ON GE(111)
    DAWERITZ, L
    PCHELYAKOV, OP
    MASHANOV, VI
    SOKOLOV, LV
    STENIN, SI
    BERGER, H
    SURFACE SCIENCE, 1990, 230 (1-3) : L162 - L168
  • [43] The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface
    Nikiforov, AI
    Markov, VA
    Cherepanov, VA
    Pchelyakov, OP
    THIN SOLID FILMS, 1998, 336 (1-2) : 183 - 187
  • [44] MBE growth and RHEED characterization of MnSe/ZnSe superlattices on GaAs (100) substrates
    Ishibe, I
    Nabetani, Y
    Kato, T
    Matsumoto, T
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 172 - 177
  • [45] X-RAY-INTENSITY OSCILLATIONS OCCURRING DURING GROWTH OF GE ON GE(111) - A COMPARISON WITH RHEED
    VANSILFHOUT, RG
    FRENKEN, JWM
    VANDERVEEN, JF
    FERRER, S
    JOHNSON, A
    DERBYSHIRE, H
    NORRIS, C
    MACDONALD, JE
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 : SB213 - SB214
  • [46] PHASE-LOCKED RHEED OSCILLATIONS DURING MBE GROWTH OF GAAS AND ALXGA1-XAS
    BRIONES, F
    GOLMAYO, D
    GONZALEZ, L
    RUIZ, A
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 19 - 25
  • [47] The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface
    Nikiforov, AI
    Markov, VA
    Cherepanov, VA
    Pchelyakov, OP
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 183 - 187
  • [48] HIGH-QUALITY ZNSE/GAAS SUPERLATTICES - MEE GROWTH, AND STRUCTURAL AND OPTICAL CHARACTERIZATION
    RAMESH, S
    KOBAYASHI, N
    HORIKOSHI, Y
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 752 - 756
  • [49] Reflection high-energy electron diffraction (RHEED) oscillations in phase-locked epitaxy of ZnSe
    Griesche, J
    Jacobs, K
    JOURNAL OF CRYSTAL GROWTH, 1999, 203 (1-2) : 45 - 50
  • [50] Accuracy of AlGaAs growth rates and composition determination using RHEED oscillations
    Harvey, TE
    Bertness, KA
    Hickernell, RK
    Wang, CM
    Splett, JD
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 73 - 79