DIFFERENTIAL NEGATIVE-RESISTANCE OF N-TYPE INVERSION LAYER IN SILICON MOS FIELD-EFFECT TRANSISTOR

被引：15
|
作者：
KATAYAMA, Y
YOSHIDA, I
KOMATSUBARA, KF
KOTERA, N
机构：
来源：
APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 01期
关键词：
D O I：
10.1063/1.1653968
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：31 / +
页数：1
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