TIME OF FLIGHT OF ELECTRONS AND HOLES AT 77-K AND 300-K IN GAAS ALAS SUPERLATTICES

被引：5

作者：

LEPERSON, H ^{[1
]}

PALMIER, JF ^{[1
]}

MINOT, C ^{[1
]}

ESNAULT, JC ^{[1
]}

MOLLOT, F ^{[1
]}

机构：

[1] CNRS,L2M,F-92220 BAGNEUX,FRANCE

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90347-B

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The carrier drift velocity versus applied electric field in GaAs/AlAs superlattices is directly determined from a photocurrent time of flight technique. The electron negative differential velocity regime is clearly evidenced and in good agreement with static current-voltage data in the case of a relatively thick barrier superlattice (7 AlAs layers). For a thinner barrier superlattice (4 AlAs layers) the low field electron mobility seems temperature dependent, and also a drastic hole mobility decrease is observed at low temperature and interpreted in terms of light hole freeze out. © 1990.

引用

页码：441 / 445

页数：5

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