DENSITY AND ENERGY OF SURFACE STATES ON CLEAVED SURFACES OF GERMANIUM

被引:29
作者
PALMER, DR
MORRISON, SR
DAUENBAUGH, CE
机构
来源
PHYSICAL REVIEW | 1963年 / 129卷 / 02期
关键词
D O I
10.1103/PhysRev.129.608
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:608 / &
相关论文
共 24 条
[1]   CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J].
ALLEN, FG ;
EISINGER, J ;
HAGSTRUM, HD ;
LAW, JT .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1563-1571
[2]   ELECTRICAL PROPERTIES OF CLEAN GERMANIUM SURFACES [J].
BARNES, GA ;
BANBURY, PC .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (462) :1020-1021
[3]   ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :252-253
[4]   PROPERTIES OF CLEANED GERMANIUM SURFACES [J].
FORMAN, R .
PHYSICAL REVIEW, 1960, 117 (03) :698-704
[5]   SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS [J].
GOBELI, GW ;
ALLEN, FG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :23-&
[6]   THE ADSORPTION OF OXYGEN ON CLEAN SILICON SURFACES [J].
GREEN, M ;
MAXWELL, KH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) :145-150
[7]  
GREEN M, 1957, SEMICONDUCTOR SURFAC, P349
[8]  
Handler P., 1957, SEMICONDUCTOR SURFAC, P23
[9]   FREE BONDS ON THE CLEAN SURFACES OF GERMANIUM SINGLE CRYSTALS [J].
KOBAYASHI, A ;
KAWAJI, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (09) :1054-1054
[10]  
KOBAYASHI A, 1960, J PHYS CHEM SOLIDS, V14, P27