CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM

被引：100

作者：

ALLEN, FG

EISINGER, J

HAGSTRUM, HD

LAW, JT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1959年 / 30卷 / 10期

关键词：

D O I：

10.1063/1.1735001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1563 / 1571

页数：9

共 22 条

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511

[2] WORK FUNCTION AND EMISSION STUDIES ON CLEAN SILICON SURFACES [J].

ALLEN, FG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :119-&

[3] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J].

ARCHER, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) :619-622

[4]

ASHWORTH F, 1951, ADV ELECTRONICS, V3, P33

[5]

BRAUN A, 1947, HELV PHYS ACTA, V20, P33

[6] FIELD EMISSION FROM SILICON [J].

DASARO, LA .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (01) :33-34

[7]

DUSHMAN S, 1949, SCI F VACUUM TECHNIQ, P17

[8] ADSORPTION OF OXYGEN ON SILICON [J].

EISINGER, J ;

LAW, JT .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (02) :410-412

[9] PROPERTIES OF HYDROGEN CHEMISORBED ON TUNGSTEN [J].

EISINGER, J .

JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) :1154-1160

[10] ADSORPTION OF CO ON TUNGSTEN AND ITS EFFECT ON THE WORK FUNCTION [J].

EISINGER, J .

JOURNAL OF CHEMICAL PHYSICS, 1957, 27 (05) :1206-1207

← 1 2 3 →