LATTICE-RELAXATION MECHANISM OF ZNSE LAYER GROWN ON A (100) GAAS SUBSTRATE TILTED TOWARD (011)

被引：35
|
作者：
OHKI, A
SHIBATA, N
ZEMBUTSU, S
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期
关键词：
D O I：
10.1063/1.341963
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：694 / 698
页数：5
相关论文
共 44 条
  • [21] Dependence of electron spin relaxation times on the crystal orientation of CdTe grown on (100)ZnSe/GaAs substrates
    Zhang, Qiang
    Li, Yunpu
    Liu, Xuejun
    Pagliero, Daniela
    Shen, Aidong
    Meriles, Carlos A.
    Tamargo, Maria C.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6, 2010, 7 (06): : 1665 - 1667
  • [22] Properties of InAs thin films grown on (100)-oriented GaAs substrate with various tilted angles and directions of misorientation
    Yamamoto, M
    Iwabuchi, T
    Ito, T
    Yoshida, T
    Isoya, T
    Shibasaki, I
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 191 - 196
  • [23] LATTICE STRAIN RELAXATION OF ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY ON (100)GAAS
    LOVERGINE, N
    LEO, G
    MANCINI, AM
    ROMANATO, F
    DRIGO, AV
    GIANNINI, C
    TAPFER, L
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 55 - 60
  • [24] Tuning of color chromaticity of light emission from ZnSe films grown on a GaAs substrate by atomic layer epitaxy
    Skrobot, M.
    Godlewski, M.
    Guziewicz, E.
    Kopalko, K.
    Phillips, M. R.
    ACTA PHYSICA POLONICA A, 2006, 110 (03) : 359 - 367
  • [25] Lattice Strain Relaxation and Compositional Control in As-Rich GaAsP/(100)GaAs Heterostructures Grown by MOVPE
    Prete, Paola
    Calabriso, Daniele
    Burresi, Emiliano
    Tapfer, Leander
    Lovergine, Nico
    MATERIALS, 2023, 16 (12)
  • [26] Lattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs
    Prete, P
    Lovergine, N
    Cingolani, R
    Mancini, AM
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS, 1999, 297-2 : 265 - 268
  • [27] Validation of the p-type Behavior of an Ag-doped ZnSe film grown heteroepitaxially on GaAs(100) substrate
    Narushima, Takashi
    Yanagita, Hiroaki
    Orita, Masahiro
    THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS - 2007, 2007, 1012 : 133 - 138
  • [28] Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer
    Nishino, H
    Sugiyama, I
    Nishijima, Y
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3238 - 3243
  • [29] High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer
    Kuo, Wei-Cheng
    Hsieh, Hung-Chi
    Chih-Hung, Wu
    Wen-Hsiang, Huang
    Lee, Chien-Chieh
    Chang, Jenq-Yang
    INTERNATIONAL JOURNAL OF PHOTOENERGY, 2016, 2016
  • [30] Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy
    Kuo, MC
    Yang, CS
    Tseng, PY
    Lee, J
    Shen, JL
    Chou, WC
    Shih, YT
    Ku, CT
    Lee, MC
    Chen, WK
    JOURNAL OF CRYSTAL GROWTH, 2002, 242 (3-4) : 533 - 537
12345