共 50 条
- [41] FORMATION OF A BARRIER JUNCTION IN SURFACE-BARRIER DETECTORS ON BASIS OF P-TYPE SILICON DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1974, 27 (11): : 1485 - 1487
- [42] TIME CHARACTERISTICS OF SURFACE-BARRIER DETECTORS IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1968, 32 (12): : 2070 - +
- [43] SURFACE-BARRIER SILICON PHOTODETECTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 310 - 312
- [44] SILICON SURFACE-BARRIER TRANSISTORS PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 486 - 486
- [46] EFFECT OF METHOD OF ETCHING ON STATE OF SURFACE AND ON ENERGY RESOLUTION OF SILICON SURFACE-BARRIER DETECTORS INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1969, (05): : 1158 - &
- [48] PREPARATION OF HIGH-RESISTIVITY SILICON SURFACE-BARRIER DETECTORS FOR USE AT LARGE REVERSE BIAS VOLTAGES NUCLEAR INSTRUMENTS & METHODS, 1964, 26 (02): : 205 - 208
- [49] CALIBRATION PROCEDURE FOR RESPONSE OF SILICON SURFACE-BARRIER DETECTORS TO HEAVY-IONS NUCLEAR INSTRUMENTS & METHODS, 1974, 115 (01): : 47 - 55