MODELING OF HIGH-SPEED ELECTRONIC DEVICES

被引:0
|
作者
Kudrya, V. G. [1 ]
机构
[1] Odessa Natl Acad Food Technol, Educ & Res Inst Refrigerat Kriotehnolohiy & Ekoen, Odessa, Ukraine
来源
VISNYK NTUU KPI SERIIA-RADIOTEKHNIKA RADIOAPARATOBUDUVANNIA | 2013年 / 54期
关键词
simulation in nanoelectronics; high-frequency electronics; electromagnetic interference;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Introduction. The theme of this publication is the modeling of electronic tools that operate in the frequency range from zero to terahertz and higher. Application of new concepts and technologies, including biotechnology and nanotechnology, in the development of monolithic integrated circuits led to a backlog of technologies of projecting from technologies and experimental research and manufacturing. The aim of this work is to develop algorithms for analysis, reflecting not only topological as well as morphological properties of the object, that is designing within the framework of accounting EMI communicational transmission of energy and information in the volume of the monolithic integrated circuit. Basic steps for constructing the algorithm. The object of design is presented in the form of basic elements, which can be combined with a communication structure. The object of design is presented in the form of basic elements, which can be combined with a communication structure. There are three types of matrix equations: component; component - communication structure; communication structure. Systems of equations are reduced to standardized descriptors of mathematical model that are current of poles and voltage arcs whole set of basic elements. In this way mathematical model that can be implemented in CAD nano and micro technology electronics is obtained. Conclusions. Mathematical models of analysis of high-speed digital and analog electronic tools are designed. The algorithm allows to carry out the morphological optimization, namely to minimize the adverse effects outside the system of electromagnetic interaction between the components and communicator.
引用
收藏
页码:151 / 159
页数:9
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