EFFECTS OF PLASMA AND OR 193 NM EXCIMER-LASER IRRADIATION IN CHEMICAL-VAPOR DEPOSITION OF BORON FILMS FROM B2H6+HE

被引:12
|
作者
KOMATSU, S
KASAMATSU, M
YAMADA, K
MORIYOSHI, Y
机构
[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
[2] NATL INST RES INORGAN MAT,SAKURA,IBARAKI 305,JAPAN
关键词
D O I
10.1063/1.350499
中图分类号
O59 [应用物理学];
学科分类号
摘要
Plasma-enhanced chemical-vapor deposition (PECVD) with the surface irradiated by a 193 nm, 50 Hz pulsating laser was performed to synthesize boron films from B2H6 + He at a pressure of 200 Pa, where the plasma was employed to generate precursor radicals for the growth while the irradiation was intended for photochemical enhancement of the surface processes such as migration and growth reactions. In addition to the PECVD, PECVD without the irradiation as well as pyrolytic CVD with and without the irradiation were done so as to clarify the effects of the plasma and the laser in the CVD. Micromorphological boron columns were found to grow toward the laser light, and this indicated directly that the surface growth reactions were enhanced photochemically at the laser energy density of 170 mJ/cm2 per pulse. Heating of the surface by the irradiation at this energy density was estimated to be negligible. In the pyrolytic CVD, where the surface migration of the precursor radicals was considered to be relatively hindered according to measured activation energies, a morphological change was found to indicate irradiation-enhanced migration at the laser energy density of 3 mJ/cm2 per pulse. Semiempirical molecular orbital calculations predicted that borane molecules (BH3) should be the dominant precursor in the pyrolytic CVD while the counterpart could be BH2 radicals in the PECVD: This prediction supports a hypothetical photoinduced growth reaction such as BH2* + nhv = B(s) + H2 (n = 1,2, ...) where BH2* signifies a BH2 radical chemisorbed to a site for growth reaction and B(s) does a boron atom incorporated into the solid structure. This prediction was also consistent with the experimental result that crystalline boron films have grown only in the PECVD while the pyrolytic CVD yielded only amorphous growth at substrate temperatures between 690 and 890-degrees-C. The predicted precursor BH3 for the pyrolytic CVD suggested its photoinduced migration mechanism similar to the photolysis of diborane.
引用
收藏
页码:5654 / 5664
页数:11
相关论文
共 50 条
  • [31] Growth of MgB2 thin films by chemical vapour deposition using B2H6 as a boron source
    Wang, SF
    Zhu, YB
    Liu, Z
    Zhou, YL
    Zhang, Q
    Chen, ZH
    Lu, HB
    Yang, GZ
    CHINESE PHYSICS LETTERS, 2003, 20 (08) : 1356 - 1358
  • [32] Growth Temperature Effects of Chemical Vapor Deposition-Grown Boron Nitride Layer Using B2H6 and NH3
    Yamada, Hisashi
    Inotsume, Sho
    Kumagai, Naoto
    Yamada, Toshikazu
    Shimizu, Mitsuaki
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (04):
  • [33] Effects of rf bias voltage and H2 flow rate on the growth of cubic boron nitride films by chemical vapor deposition
    J. Yu
    S. Matsumoto
    K. Okada
    Applied Physics A, 2005, 80 : 777 - 781
  • [34] Effects of rf bias voltage and H2 flow rate on the growth of cubic boron nitride films by chemical vapor deposition
    Yu, J
    Matsumoto, S
    Okada, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (04): : 777 - 781
  • [35] Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H2 downstream plasma
    Vanstreels, Kris
    Urbanowicz, Adam M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (01): : 173 - 179
  • [36] Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3
    Yamada, Hisashi
    Inotsume, Sho
    Kumagai, Naoto
    Yamada, Toshikazu
    Shimizu, Mitsuaki
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (02):
  • [37] GROWTH FORMS OF BETA-RHOMBOHEDRAL BORON WHISKERS AND PLATELETS PREPARED IN A LOW-PRESSURE B2H6+HE PLASMA IN TERMS OF PERIODIC BOND CHAIN METHOD
    KOMATSU, S
    MORIYOSHI, Y
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) : 63 - 72
  • [38] INFLUENCE OF ATOMIC-HYDROGEN ON THE GROWTH REACTIONS OF AMORPHOUS BORON FILMS IN A LOW-PRESSURE B2H6+HE+H2 PLASMA
    KOMATSU, S
    MORIYOSHI, Y
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1878 - 1884
  • [39] Structural homogeneity of boron carbide thin films fabricated using plasma-enhanced chemical vapor deposition from B5H9 + CH4
    Lee, Sunwoo
    Mazurowski, J.
    O'Brien, W.L.
    Dong, Q.Y.
    Jia, J.J.
    Cailcott, T.A.
    Tan, Yexin
    Miyano, K.E.
    Ederer, D.L.
    Mueller, D.R.
    Dowben, P.A.
    Journal of Applied Physics, 1993, 74 (11):
  • [40] Effects of the Ar and He dilution gas mixture ratio on the hardness of a-C: H films synthesized by atmospheric pressure plasma enhanced chemical vapor deposition
    Kishimoto, Eiichi
    Maegawa, Shunto
    Shirakura, Akira
    Suzuki, Tetsuya
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (04):