TRIODE TYPE REACTIVE ION ETCHING SYSTEM

被引：0
|
作者：
SHIBAYAMA, H [1 ]
OGAWA, T [1 ]
KOBAYASHI, K [1 ]
KOSUGI, M [1 ]
HISATSUGU, T [1 ]
机构：
[1] FUJITSU LABS LTD,KAWASAKI 211,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C108 / C108
页数：1
相关论文
共 50 条
  • [21] REACTIVE ION ETCHING.
    Gorowitz, Bernard
    Saia, Richard J.
    VLSI Electronics, Microstructure Science, 1984, 8 : 297 - 339
  • [22] REACTIVE-ION ETCHING
    OEHRLEIN, GS
    PHYSICS TODAY, 1986, 39 (10) : 26 - 33
  • [23] REACTIVE ION ETCHING WITH THE FLUOROCHLOROMETHANES
    HO, YS
    BOBBIO, SM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C311 - C311
  • [24] REACTIVE ION ETCHING OF DIAMOND
    SANDHU, GS
    CHU, WK
    APPLIED PHYSICS LETTERS, 1989, 55 (05) : 437 - 438
  • [25] REACTIVE ION ETCHING FOR VLSI
    EPHRATH, LM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1315 - 1319
  • [26] REACTIVE ION ETCHING OF SILICON
    SCHWARTZ, GC
    SCHAIBLE, PM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 410 - 413
  • [27] TRIODE PLASMA ETCHING
    MINKIEWICZ, VJ
    CHAPMAN, BN
    APPLIED PHYSICS LETTERS, 1979, 34 (03) : 192 - 193
  • [28] A novel etching technology with reactive ion etching system for GaAs via-hole etching applications
    Lin, CS
    Fang, YK
    Ting, SF
    Wu, CL
    Chang, CS
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2003, 16 (01) : 57 - 59
  • [29] REACTIVE ION ETCHING OF NIOBIUM
    FOXE, TT
    HUNT, BD
    ROGERS, C
    KLEINSASSER, AW
    BUHRMAN, RA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1394 - 1397
  • [30] CONTACT HOLE ETCHING IN A LOAD-LOCKED HEXAGONAL REACTIVE ION ETCHING SYSTEM
    SHANFIELD, S
    HENDRIKS, M
    SOLID STATE TECHNOLOGY, 1984, 27 (11) : 203 - 206
12345