X-RAY SPECTROSCOPIC STUDY OF THE DISTRIBUTION OF STRUCTURAL DEFECTS IN IMPLANTED SILICON

被引：0
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作者：
SHULAKOV, AS
FILATOVA, EO
STEPANOV, AP
KOZHAKHMETOV, SK
机构：
来源：
FIZIKA TVERDOGO TELA | 1990年 / 32卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：2895 / 2898
页数：4
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