IN-SITU PYROMETRIC INTERFEROMETRY MONITORING AND CONTROL OF III-V LAYERED STRUCTURES DURING MOLECULAR-BEAM EPITAXY GROWTH

被引:7
|
作者
LIU, X
RANALLI, E
SATO, DL
LI, Y
LEE, HP
机构
[1] Univ of California, Irvine
来源
关键词
D O I
10.1116/1.588152
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A detailed modeling of pyrometric radiation from AlAs/GaAs layered structures during molecular-beam epitaxy growth is presented. Based on simulations using an approximate form of this model and a novel phase estimator, a closed-loop control system was devised and tested. Experimental results are presented for a quarter-wavelength distributed Bragg reflector grown with and without closed-loop control. Improved accuracy is clearly evident for the layers grown with feedback control.
引用
收藏
页码:742 / 745
页数:4
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