AN INVESTIGATION OF THE POROUS SILICON OPTICAL-ABSORPTION POWER-LAW NEAR THE BAND-EDGE

A theoretical investigation of the absorption coefficient of p-type doped porous silicon near the band edge is presented. We assume that the absorption coefficient is constructed by taking an average over a distribution (in terms of band gap) of absorption coefficients of individual crystallites. Exploiting physics fundamental to the crystallite optical absorption process, we derive the relation between the absorption coefficient and the averaged conduction density of states near the band edge for porous silicon. By postulating a specific form for the effective conduction density of states we find excellent agreement with recent optical absorption data for p-type doped porous silicon. We attempt to explain the basis for this postulate phenomenologically by suggesting a certain large-scale behaviour of the particle size distribution. The implication of further experimental verification will be discussed.