OPTICAL-PROPERTIES OF GAP/ALP SHORT-PERIOD SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引:21
|
作者
ASAMI, K [1 ]
ASAHI, H [1 ]
WATANABE, T [1 ]
ENOKIDA, M [1 ]
GONDA, S [1 ]
FUJITA, S [1 ]
机构
[1] KYOTO UNIV,DEPT ELECT ENGN,SAKYO KU,KYOTO 606,JAPAN
关键词
D O I
10.1063/1.108779
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical properties of (GaP)m/(AlP)n superlattices (SLs), with m+n=14, grown on GaP(001) by gas source molecular beam epitaxy have been studied by photoluminescence (PL), electroreflectance (ER), and optical reflectance. The dependence of the PL peak energies and the relative intensity on the monolayer number of AlP is in agreement with those theoretically predicted for the case of type II band alignment of GaP/AlP SLs. The refractive index of GaP/AlP SLs has been studied for the first time and compared with that of an AlGaP alloy. The refractive index calculated for an AlGaP alloy using a single-effective-oscillator model is consistent with the experimentally obtained results.
引用
收藏
页码:81 / 83
页数:3
相关论文
共 50 条
  • [31] EFFECT OF DISORDER ON THE OPTICAL-PROPERTIES OF SHORT-PERIOD SUPERLATTICES
    STROZIER, JA
    ZHANG, YA
    HORTON, C
    IGNATIEV, A
    SHIH, HD
    APPLIED PHYSICS LETTERS, 1993, 62 (26) : 3426 - 3428
  • [32] GROWTH-MECHANISM OF (INAS)M(GAAS)N STRAINED SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    KAWAI, T
    YONEZU, H
    OGASAWARA, Y
    SAITO, D
    PAK, K
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7257 - 7263
  • [33] RAMAN-SCATTERING CHARACTERIZATION OF INTERFACE BROADENING IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    JUSSERAND, B
    ALEXANDRE, F
    PAQUET, D
    LEROUX, G
    APPLIED PHYSICS LETTERS, 1985, 47 (03) : 301 - 303
  • [34] STRAIN RELAXATION PROCESS OF (INAS)(M)(GAAS)(N) STRAINED SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    KAWAI, T
    YONEZU, H
    SAITO, D
    YOKOZEKI, M
    PAK, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10): : 5617 - 5622
  • [35] OPTICAL-PROPERTIES OF GAAS/ALAS SHORT-PERIOD SUPERLATTICES
    RECIO, M
    CASTANO, JL
    BRIONES, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07): : 1204 - 1209
  • [36] IMPROVEMENTS OF ELECTRICAL AND OPTICAL-PROPERTIES OF INALAS GROWN BY MOLECULAR-BEAM EPITAXY
    KAWAMURA, Y
    NAKASHIMA, K
    ASAHI, H
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3262 - 3264
  • [37] OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY-GROWN ZNSE ON GAAS
    KARPINSKA, K
    SUCHOCKI, A
    GODLEWSKI, M
    HOMMEL, D
    ACTA PHYSICA POLONICA A, 1993, 84 (03) : 551 - 554
  • [38] PHOTOLUMINESCENCE INVESTIGATION OF INGAAS INALAS SHORT-PERIOD SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
    NAKAMURA, H
    CHINONE, N
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 489 - 494
  • [39] Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy
    Krivobok, V. S.
    Pashkeev, D. A.
    Klekovkin, A. V.
    Minaev, I. I.
    Savin, K. A.
    Eroshenko, G. N.
    Goncharov, A. E.
    Nikolaev, S. N.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2023, 50 (09) : 396 - 402
  • [40] Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy
    V. S. Krivobok
    D. A. Pashkeev
    A. V. Klekovkin
    I. I. Minaev
    K. A. Savin
    G. N. Eroshenko
    A. E. Goncharov
    S. N. Nikolaev
    Bulletin of the Lebedev Physics Institute, 2023, 50 : 396 - 402