ON THE TRANSITION FROM TUNNELING REGIME TO POINT-CONTACT - GRAPHITE

被引:19
|
作者
AGRAIT, N
RODRIGO, JG
VIEIRA, S
机构
[1] Laboratorio de Bajas Temperaturas, Departamento Física de la Materia Condensada, C-III
关键词
D O I
10.1016/0304-3991(92)90263-J
中图分类号
TH742 [显微镜];
学科分类号
摘要
In this paper we present a model of the transition from tunneling regime to point-contact that shows how density-of-states features may appear in current-voltage characteristics between these two limits. This transition is gradual and there is no clear-cut point separating both situations. We also give a semiquantitative account of the variation of conductance with tip and sample distance in STS (scanning tunneling spectroscopy performed with a STM) and apply this model to the interpretation of spectroscopic results obtained in graphite, We also show that it is possible to have atomic resolution with very low tunneling resistances (approximately 1 k-OMEGA) and high currents (approximately 10-mu-A). Under these conditions the forces between tip and sample appear clearly in the topographic images as distortions. These forces vary qualitatively with temperature in the range 4-300 K.
引用
收藏
页码:177 / 183
页数:7
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