MOLECULAR-BEAM EPITAXY OF IN-DOPED CDTE

被引:10
|
作者
SUGIYAMA, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 04期
关键词
D O I
10.1143/JJAP.21.665
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:665 / 666
页数:2
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