MOLECULAR-BEAM EPITAXY OF IN-DOPED CDTE

被引：10
|
作者：
SUGIYAMA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 04期
关键词：
D O I：
10.1143/JJAP.21.665
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：665 / 666
页数：2
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