EXCITON CAPTURE CROSS-SECTIONS OF INDIUM AND BORON IMPURITIES IN SILICON

被引：19

|

作者：

FEENSTRA, RM

MCGILL, TC

机构：

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 36卷 / 12期

关键词：

D O I：

10.1016/0038-1098(80)90033-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1039 / 1045

页数：7

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