CURRENT TRANSPORT IN MODULATION-DOPED GA0.47IN0.53AS AL0.48IN0.52AS HETEROJUNCTIONS AT MODERATE ELECTRIC-FIELDS

被引：11
|
作者：
DRUMMOND, TJ
MORKOC, H
CHENG, KY
CHO, AY
机构：
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 05期
关键词：
D O I：
10.1063/1.331149
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3654 / 3657
页数：4
相关论文
共 50 条
  • [31] 新的高速长波Al0.48In0.52As/Ga0.47In0.53As多量子阱APD
    廖先炳
    半导体光电, 1986, (03) : 35 - 35
  • [32] Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers
    Vinokurov, D. A.
    Zorina, S. A.
    Kapitonov, V. A.
    Nikolaev, D. N.
    Stankevich, A. L.
    Shamakhov, V. V.
    Tarasov, I. S.
    TECHNICAL PHYSICS LETTERS, 2006, 32 (04) : 299 - 301
  • [33] Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
    Haupt, M
    Ganser, P
    Kohler, K
    Emminger, S
    Muller, S
    Rothemund, W
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 89 - 92
  • [34] PHOTOLUMINESCENCE DETERMINATION OF WELL DEPTH OF GA0.47IN0.53AS/AL0.48IN0.52AS IN AN ULTRATHIN SINGLE QUANTUM WELL
    SHUM, K
    HO, PP
    ALFANO, RR
    WELCH, DF
    WICKS, GW
    EASTMAN, LF
    PHYSICAL REVIEW B, 1985, 32 (06): : 3806 - 3810
  • [35] CHARACTERIZATION OF INSULATED GATE GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS
    LEONARD, TP
    BREGMAN, J
    PEPPER, M
    DAVIES, GJ
    SCOTT, EG
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) : 5090 - 5094
  • [36] Determination of the alloy scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from magnetotransport measurements
    Tiras, E
    Altinöz, S
    Cankurtaran, M
    Çelik, H
    Balkan, N
    JOURNAL OF MATERIALS SCIENCE, 2005, 40 (24) : 6391 - 6397
  • [37] ENERGY-LEVELS AND OPTICAL-ABSORPTION ASSOCIATED WITH GA0.47IN0.53AS/AL0.48IN0.52AS MQW
    ADELABU, JSA
    RIDLEY, BK
    SCOTT, EG
    DAVIES, GJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (09) : 873 - 878
  • [38] Determination of the alloy scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from magnetotransport measurements
    E. Tiraş
    S. Altinöz
    M. Cankurtaran
    H. Çelik
    N. Balkan
    Journal of Materials Science, 2005, 40 : 6391 - 6397
  • [39] Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
    Vasileska, D
    Prasad, C
    Wieder, HH
    Ferry, DK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1903 - 1907
  • [40] Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
    Vasileska, D
    Prasad, C
    Wieder, HH
    Ferry, DK
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 239 (01): : 103 - 109
12345