CURRENT TRANSPORT IN MODULATION-DOPED GA0.47IN0.53AS AL0.48IN0.52AS HETEROJUNCTIONS AT MODERATE ELECTRIC-FIELDS

被引:11
|
作者
DRUMMOND, TJ
MORKOC, H
CHENG, KY
CHO, AY
机构
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1063/1.331149
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3654 / 3657
页数:4
相关论文
共 50 条
  • [1] FERMI EDGE SINGULARITY IN THE LUMINESCENCE OF MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS SINGLE HETEROJUNCTIONS
    ZHANG, YH
    JIANG, DS
    CINGOLANI, R
    PLOOG, K
    APPLIED PHYSICS LETTERS, 1990, 56 (22) : 2195 - 2197
  • [2] SHEET ELECTRON-CONCENTRATION AT THE HETEROINTERFACE IN AL0.48IN0.52AS/GA0.47IN0.53AS MODULATION-DOPED STRUCTURES
    ITOH, T
    GRIEM, T
    WICKS, GW
    EASTMAN, LF
    ELECTRONICS LETTERS, 1985, 21 (09) : 373 - 374
  • [3] MODULATION-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTODETECTOR PREPARED BY MOLECULAR-BEAM EPITAXY
    CHEN, CY
    PANG, YM
    CHO, AY
    ALAVI, K
    GARBINSKI, PA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 262 - 264
  • [4] INTERSUBBAND ABSORPTION IN A MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS MULTIPLE QUANTUM WELL STRUCTURE
    LOBENTANZER, H
    KONIG, W
    STOLZ, W
    PLOOG, K
    ELSAESSER, T
    BAUERLE, RJ
    APPLIED PHYSICS LETTERS, 1988, 53 (07) : 571 - 573
  • [5] DEPENDENCE OF ELECTRON-MOBILITY ON SPACER THICKNESS AND ELECTRON-DENSITY IN MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS
    HSIEH, KH
    OHNO, H
    WICKS, G
    EASTMAN, LF
    ELECTRONICS LETTERS, 1983, 19 (05) : 160 - 162
  • [6] LOW-RESISTANCE ALLOYED NIGEAUAGAU OHMIC CONTACTS TO MODULATION-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS
    CAPANI, PM
    MUKHERJEE, SD
    GRIEM, HT
    RATHBUN, L
    EASTMAN, LF
    ELECTRONICS LETTERS, 1986, 22 (05) : 285 - 286
  • [7] TWO-DIMENSIONAL ELECTRON-GAS DENSITY CALCULATION IN GA0.47IN0.53AS/AL0.48IN0.52AS, GA0.47IN0.53AS/INP, AND GA0.47IN0.53AS/INP/AL0.48IN0.52AS HETEROSTRUCTURES
    YOON, KS
    STRINGFELLOW, GB
    HUBER, RJ
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) : 5915 - 5919
  • [8] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY
    CHENG, KY
    CHO, AY
    DRUMMOND, TJ
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149
  • [9] INTERDIGITATED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS
    CHEN, CY
    PANG, YM
    ALAVI, K
    CHO, AY
    GARBINSKI, PA
    APPLIED PHYSICS LETTERS, 1984, 44 (01) : 99 - 101
  • [10] HIGH CONDUCTANCE AND LOW PERSISTENT PHOTOCONDUCTIVITY IN GA0.47IN0.53AS/AL0.48IN0.52AS MODULATION-DOPED STRUCTURES WITH PINCHOFF CAPABILITIES
    GRIEM, T
    NATHAN, M
    WICKS, GW
    HUANG, J
    CAPANI, PM
    EASTMAN, LF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 655 - 656