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- [3] MODULATION-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTODETECTOR PREPARED BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 262 - 264
- [10] HIGH CONDUCTANCE AND LOW PERSISTENT PHOTOCONDUCTIVITY IN GA0.47IN0.53AS/AL0.48IN0.52AS MODULATION-DOPED STRUCTURES WITH PINCHOFF CAPABILITIES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 655 - 656