NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES

被引：32
|
作者：
ZHANG, YH
YANG, XP
LIU, W
ZHANG, PH
JIANG, DS
机构：
[1] National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期
关键词：
D O I：
10.1063/1.112124
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.
引用
收藏
页码：1148 / 1150
页数：3
相关论文
共 48 条
12345