ELECTRONIC-STRUCTURE OF 3D TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS

被引：5
|
作者：
MIZOKAWA, T
FUJIMORI, A
机构：
[1] Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词：
ELECTRONIC STRUCTURE; 3D TRANSITION-METAL IMPURITY IN SEMICONDUCTOR; D-D OPTICAL ABSORPTION; PHOTOEMISSION; DONOR AND ACCEPTOR LEVELS;
D O I：
10.7567/JJAPS.32S3.417
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The d-d optical absorption spectra, photoemission spectra and donor and acceptor ionization energies of 3d transition-metal impurities in II-VI semiconductors have been investigated using the cluster and Anderson impurity models with configuration interaction. It is shown that both systematic chemical trends and multiplet effects are essential to explain the variations of the donor and acceptor levels with transition-metal elements.
引用
收藏
页码：417 / 418
页数：2
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