THE NO-PHONON LUMINESCENCE AT 0.84 EV IN GAAS-CR - SPLITTING UNDER UNIAXIAL-STRESS

被引：14

作者：

BARRAU, J ^{[1
]}

VOILLOT, F ^{[1
]}

BROUSSEAU, M ^{[1
]}

BRABANT, JC ^{[1
]}

POIBLAUD, G ^{[1
]}

机构：

[1] RTC LA RADIOTECH COMPELEC,F-14000 CAEN,FRANCE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 23期

关键词：

D O I：

10.1088/0022-3719/14/23/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3447 / 3462

页数：16

共 43 条

[31] SYMMETRY OF CONDUCTION STATES FOR GAAS-ALAS TYPE-II SUPERLATTICES UNDER UNIAXIAL-STRESS
LEFEBVRE, P
GIL, B
MATHIEU, H
PLANEL, R
PHYSICAL REVIEW B, 1989, 39 (08): : 5550 - 5553
[32] INVESTIGATION OF POSITIVELY CHARGED ACCEPTOR STATES IN SI AND GE UNDER UNIAXIAL-STRESS BY PHONON-INDUCED CONDUCTION
GROSS, P
LASSMANN, K
ANNALEN DER PHYSIK, 1995, 4 (06) : 503 - 525
[33] UNIAXIAL-STRESS SPLITTING OF PHOTO-LUMINESCENCE - TRANSITIONS AT OPTICAL-CENTERS IN CUBIC-CRYSTALS - THEORY AND APPLICATION TO DIAMOND
MOHAMMED, K
DAVIES, G
COLLINS, AT
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (12): : 2779 - 2788
[34] GAMMA-X INTERVALLEY TUNNELING IN A GAAS ALAS RESONANT-TUNNELING DIODE UNDER UNIAXIAL-STRESS
CARNAHAN, RE
MARTIN, KP
HIGGINS, RJ
PARK, BG
WOLAK, E
LEAR, KL
HARRIS, JS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 500 - 503
[35] GROUND-STATE ENERGY SHIFT OF ACCEPTOR-HYDROGEN COMPLEXES IN SI AND GAAS UNDER UNIAXIAL-STRESS
VELOARISOA, IA
STAVOLA, M
CHENG, YM
UFTRING, S
WATKINS, GD
PEARTON, SJ
ABERNATHY, CR
LOPATA, J
PHYSICAL REVIEW B, 1993, 47 (24): : 16237 - 16241
[36] Uniaxial-stress investigation of the phonon-assisted recombination mechanisms associated with the X states in type-II GaAs/AlAs superlattices
Tribe, WR
Klipstein, PC
Smith, GW
Grey, R
PHYSICAL REVIEW B, 1996, 54 (12) : 8721 - 8727
[37] Uniaxial-stress investigation of the phonon-assisted recombination mechanisms associated with the X states in type-II GaAs/AlAs superlattices
Tribe, W. R.
Klipstein, P. C.
Smith, G. W.
Grey, R.
Physical Review B: Condensed Matter, 54 (12):
[38] UNIAXIAL-STRESS SPLITTING OF OPTICAL-TRANSITIONS AT MONOCLINIC-II CENTERS IN CUBIC-CRYSTALS - THE 2.424EV BAND IN BROWN DIAMOND
NAZARE, MH
EUROPHYSICS LETTERS, 1987, 4 (01): : 73 - 78
[39] PHONON CONDUCTIVITY OF DOPED GERMANIUM UNDER UNIAXIAL-STRESS IN THE [110] DIRECTION, (VOL B46, PG 7486, 1992)
SOOD, KC
ROY, MK
PHYSICAL REVIEW B, 1993, 48 (11): : 8521 - 8521
[40] IMPURITY PHOTO-LUMINESCENCE OF GAAS-CU NEAR 1.36 EV UNDER CONDITIONS OF UNIAXIAL COMPRESSION ALONG THE [111] DIRECTION
AVERKIEV, NS
ASHIROV, TK
GUTKIN, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 61 - 64

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