NEGATIVE DIFFERENTIAL RESISTANCE DUE TO RESONANT INTERBAND TUNNELING OF HOLES

被引：8
|
作者：
CHOW, DH
YU, ET
SODERSTROM, JR
TING, DZY
MCGILL, TC
机构：
[1] T. J. Watson Sr. Laboratory of Applied Physics, California Institute of Technology, Pasadena
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期
关键词：
D O I：
10.1063/1.346290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current-voltage (I-V) behavior of a GaSb(p)/AlSb/InAs/AlSb/GaSb(p) resonant interband tunneling (RIT) heterostructure is analyzed experimentally and theoretically. The structure has been successfully grown on a (100)-oriented GaAs substrate by molecular-beam epitaxy, demonstrating that more exotic lattice-matched substrates (such as InAs or GaSb) are not required for RIT devices. Theoretical simulations of I-V behavior are developed, employing a two-band tight-binding model. Experimental I-V curves show pronounced negative differential resistance, with a peak-to-valley current ratio of 8.3 at 300 K. Good agreement is observed between measured and calculated peak current densities, consistent with light-hole tunneling through the confined InAs conduction-band state.
引用
收藏
页码：3744 / 3746
页数：3
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