ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF SHORT-WAVELENGTH GAINP/AIGAINP LASER GROWN ON (511)A GAAS SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY

被引:8
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作者
MINAGAWA, S
TANAKA, T
KONDOW, M
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D O I
10.1049/el:19890620
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:925 / 926
页数:2
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