ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF SHORT-WAVELENGTH GAINP/AIGAINP LASER GROWN ON (511)A GAAS SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY

被引：8
|
作者：
MINAGAWA, S
TANAKA, T
KONDOW, M
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 14期
关键词：
D O I：
10.1049/el:19890620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：925 / 926
页数：2
相关论文
共 50 条
  • [1] SHORT-WAVELENGTH ROOM-TEMPERATURE CONTINUOUS-WAVE LASER OPERATION OF INALP-INGAP SUPERLATTICES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHELAKARA, RV
    ISLAM, MR
    NEFF, JG
    FERTITTA, KG
    HOLMES, AL
    CIUBA, FJ
    DUPUIS, RD
    RICHARD, TA
    HOLONYAK, N
    HSIEH, KC
    APPLIED PHYSICS LETTERS, 1994, 65 (07) : 854 - 856
  • [2] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF A GAINP/ALGAINP MULTIQUANTUM WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    IKEDA, M
    TODA, A
    NAKANO, K
    MORI, Y
    WATANABE, N
    APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1033 - 1034
  • [3] ROOM-TEMPERATURE OPERATION OF ALGAAS/GAAS RESONANT TUNNELLING STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    SCHNELL, RD
    TEWS, H
    NEUMANN, R
    ELECTRONICS LETTERS, 1989, 25 (13) : 830 - 831
  • [4] ROOM-TEMPERATURE CONTINUOUS OPERATION OF GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    CHOI, HK
    WANG, CA
    FAN, JCC
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1916 - 1918
  • [5] INTERFACE CHARACTERISTICS OF GAINP/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    TSAI, CY
    MOSER, M
    GENG, C
    HARLE, V
    FORNER, T
    MICHLER, P
    HANGLEITER, A
    SCHOLZ, F
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 786 - 791
  • [6] Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
    Kondow, M
    Natatsuka, S
    Kitatani, T
    Yazawa, Y
    Okai, M
    ELECTRONICS LETTERS, 1996, 32 (24) : 2244 - 2245
  • [7] Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
    Hitachi, Ltd, Tokyo, Japan
    Electron Lett, 24 (2244-2245):
  • [8] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    IKEDA, M
    MORI, Y
    SATO, H
    KANEKO, K
    WATANABE, N
    APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1027 - 1028
  • [9] Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition
    Yanashima, K
    Hashimoto, S
    Hino, T
    Funato, K
    Kobayashi, T
    Naganuma, K
    Tojyo, T
    Asano, T
    Asatsuma, T
    Miyajima, T
    Ikeda, M
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) : 287 - 289
  • [10] Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition
    Katsunori Yanashima
    Shigeki Hashimoto
    Tomonori Hino
    Kenji Funato
    Toshimasa Kobayashi
    Kaori Naganuma
    Tsuyoshi Tojyo
    Takeharu Asano
    Tsunenori Asatsuma
    Takao Miyajima
    Masao Ikeda
    Journal of Electronic Materials, 1999, 28 : 287 - 289
12345