PB0.8SN0.2TE INFRARED PHOTO-DIODES BY INDIUM IMPLANTATION

被引：3

|

作者：

JAKOBUS, T

ROTHEMUND, W

HURRLE, A

BAARS, J

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期

关键词：

D O I：

10.1051/rphysap:019780013012075300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：753 / 756

页数：4

相关论文

共 50 条

[41] Pb0．8Sn0．2Te晶体高压相变的X射线衍射研究
顾惠成
陈良辰
鲍忠兴
李凤英
高压物理学报, 1996, (03) : 68 - 69+71
[42] Characterization of Pb0.8Sn0.2Te films grown on KCl substrates by hot-wall epitaxy
Abramof, E., 1600, (96):
[43] CARRIER-DENSITY DEPENDENCE OF THE THERMOELECTRIC-POWER OF EPITAXIAL PB0.8SN0.2TE FILMS
BOCHKAREVA, LV
ZIMIN, SP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 421 - 423
[44] Trends in the kinetic and magnetic properties of Pb0.8Sn0.2Te single crystals of high structural perfection
M. V. Radchenko
G. V. Lashkarev
E. I. Slyn’ko
A. P. Malysheva
Physics of the Solid State, 1999, 41 : 1604 - 1607
[45] GROWTH OF HIGH MOBILITY EPITAXIAL THIN-FILMS OF PB0.8SN0.2TE BY VACUUM EVAPORATION
DAWAR, AL
KUMAR, P
PARADKAR, SK
TANEJA, OP
MATHUR, PC
INFRARED PHYSICS, 1982, 22 (03): : 133 - 137
[46] MAGNETOPHONON RESONANCE IN N-TYPE PB0.8SN0.2TE AND N-TYPE PBTE
MOZHAEV, EA
GEIMAN, KI
MATVEENKO, AV
MASHOVETS, DV
PARFENEV, RV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1403 - 1404
[47] CHARACTERIZATION OF PB0.8SN0.2TE FILMS GROWN ON KCL SUBSTRATES BY HOT-WALL EPITAXY
ABRAMOF, E
FERREIRA, SO
BOSCHETTI, C
BANDEIRA, IN
JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 637 - 644
[48] ANALYSIS OF THE COMPOSITION OF THE NEAR-SURFACE DOMAIN OF LASER-DOPED PB0.8SN0.2TE CRYSTALS
GORIN, YA
IVANOVA, OS
SHCHUKAREV, AV
YANKO, GI
INDUSTRIAL LABORATORY, 1986, 52 (08): : 726 - 727
[49] DIFFUSION OF GALLIUM IN THE SOLID-SOLUTIONS PB0.8SN0.2TE AND PBTE0.92SE0.08
SIMIRSKAYA, GP
FIRSOVA, LP
INORGANIC MATERIALS, 1985, 21 (09) : 1287 - 1289
[50] GALLIUM INDIUM ARSENIDE PHOTO-DIODES
AHMAD, K
MABBITT, AW
SOLID-STATE ELECTRONICS, 1979, 22 (03) : 327 - 333

← 1 2 3 4 5 →