共 50 条
- [41] THE SUB-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM-TRANSISTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2124 - 2127
- [42] COMPARISON OF SWITCH-ON BEHAVIOR OF MOS-TRANSISTORS OF DIFFERENT TECHNOLOGIES AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1977, 31 (01): : 37 - 39
- [44] HIGH THRESHOLD VOLTAGES IN SMALL GEOMETRY MOS-TRANSISTORS DUE TO EDGE CONTAMINATION MICROELECTRONICS AND RELIABILITY, 1980, 20 (04): : 457 - 463
- [45] THRESHOLD VOLTAGES OF SHORT-CHANNEL DUAL-GATE MOS-TRANSISTORS REVUE ROUMAINE DE PHYSIQUE, 1982, 27 (02): : 191 - 209
- [48] MODIFICATION OF THEORY OF THRESHOLD VOLTAGE SHIFT OF MOS-TRANSISTORS BY ION-IMPLANTATION PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 147 - 153
- [50] THRESHOLD VOLTAGE SHIFT OF P-CHANNEL MOS-TRANSISTORS BY IMPLANTATION OF DONORS APPLIED PHYSICS, 1975, 8 (01): : 43 - 46