SHOT NOISE BEHAVIOR OF SUB-THRESHOLD MOS-TRANSISTORS

被引：13
|
作者：
FELLRATH, J
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期
关键词：
D O I：
10.1051/rphysap:019780013012071900
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：719 / 723
页数：5
相关论文
共 50 条
  • [1] IMPACT OF SILICIDATION ON THE EXCESS NOISE BEHAVIOR OF MOS-TRANSISTORS
    VANDAMME, EP
    VANDAMME, LKJ
    CLAEYS, C
    SIMOEN, E
    SCHREUTELKAMP, RJ
    SOLID-STATE ELECTRONICS, 1995, 38 (11) : 1893 - 1897
  • [2] SUB-THRESHOLD BEHAVIOR OF ESFI-SOS TRANSISTORS
    KRANZER, D
    FICHTNER, W
    ELECTRONICS LETTERS, 1978, 14 (06) : 161 - 162
  • [3] EXPERIMENTAL INVESTIGATION OF NOISE OF MOS-TRANSISTORS
    NARYSHKI.AK
    GERASIMO.TI
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1972, 2627 (10) : 124 - 125
  • [4] Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold condition
    Isobe, Yoshioki
    Hara, Kiyohito
    Navarro, Dondee
    Takeda, Youichi
    Ezaki, Tatsuya
    Miura-Mattausch, Mitiko
    IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (04) : 885 - 894
  • [5] Simulation of the sub-threshold behavior of resistive gate NMOS transistors
    1600,
  • [6] Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions
    Cordier, C
    Boukhenoufa, A
    Pichon, L
    Michaud, JF
    SOLID-STATE ELECTRONICS, 2005, 49 (08) : 1376 - 1380
  • [7] SWITCH-ON BEHAVIOR OF MOS-TRANSISTORS
    BIERHENKE, H
    HERBST, H
    ELECTRONIC ENGINEERING, 1977, 49 (600): : 69 - 70
  • [8] ON THE ORIGIN OF 1/F NOISE IN MOS-TRANSISTORS
    MAY, EJP
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 161 - 163
  • [9] LOW-FREQUENCY NOISE IN MOS-TRANSISTORS
    GENTIL, P
    ONDE ELECTRIQUE, 1978, 58 (8-9): : 565 - 575
  • [10] WHITE-NOISE IN MOS-TRANSISTORS AND RESISTORS
    SARPESHKAR, R
    DELBRUCK, T
    MEAD, CA
    IEEE CIRCUITS AND DEVICES MAGAZINE, 1993, 9 (06): : 23 - 29
12345