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- [41] DEFECT CONTROL DURING SOLID-PHASE EPITAXIAL-GROWTH OF SIGE ALLOY LAYERSAPPLIED PHYSICS LETTERS, 1993, 63 (07) : 929 - 931IM, SWASHBURN, JGRONSKY, RCHEUNG, NWYU, KM
- [42] LOW-TEMPERATURE PRETREATMENT IN CHEMICAL VAPOR-DEPOSITION OF A SILICON FILM FOR SOLID-PHASE EPITAXIAL-GROWTHJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (10): : L1983 - L1985ISHII, KHAYASHI, Y
- [43] POINT-DEFECT INDUCED SOLID-PHASE EPITAXIAL-GROWTH AND AMORPHIZATION OF SILICONNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 431 - 433VYATKIN, AFBURAVLEV, AVZUEV, AP
- [45] TEM ANALYSIS OF VOIDS IN UHV-DEPOSITED AMORPHOUS SI LAYERS USED FOR LATERAL SOLID-PHASE EPITAXIAL-GROWTHJOURNAL OF CRYSTAL GROWTH, 1992, 118 (1-2) : 125 - 134THEUNISSEN, MJJVANROOIJMULDER, JMLBULLELIEUWMA, CWTVANDENHOUDT, DEWGRAVESTEIJN, DJVANDEWALLE, GFA
- [46] LATERAL SOLID-PHASE EPITAXIAL-GROWTH OF PHOSPHORUS-ION IMPLANTED CVD POLYSILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 1029 - 1030WARABISAKO, TBERNARD, OMONIWA, MMIYAO, M
- [47] SOLID-PHASE EPITAXIAL-GROWTH OF POLYCRYSTALLINE SILICON FILMS AMORPHIZED BY ION-IMPLANTATIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : C195 - C195QUACH, NTREIF, RTSAUR, BY
- [48] COMPARISON OF SOLID-PHASE AND MOLECULAR-BEAM EPITAXIAL-GROWTH OF SILICON WITH EVAPORATIVE DOPINGJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C84 - C84STREIT, DMETZGER, RAALLEN, FG
- [49] SOLID-PHASE EPITAXIAL-GROWTH ANISOTROPY OF VACUUM-DEPOSITED AMORPHOUS-SILICONPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : 345 - 353KAVERINA, IGKOROBTSOV, VVZAVODINSKII, VGZOTOV, AV
- [50] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICONAPPLIED PHYSICS LETTERS, 1980, 37 (02) : 170 - 172CAMPISANO, SURIMINI, EBAERI, PFOTI, G