TEMPERATURE-DEPENDENCE OF MINORITY ELECTRON-MOBILITY AND BANDGAP NARROWING IN P+ SI

被引：1
|
作者：
SWIRHUN, SE [1 ]
KANE, DE [1 ]
SWANSON, RM [1 ]
机构：
[1] STANFORD UNIV,STANFORD,CA 94305
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期
关键词：
D O I：
10.1109/T-ED.1987.23320
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2385 / 2385
页数：1
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