共 50 条
- [42] High fmax InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE IEEE Electron Device Lett, 11 (553-555):
- [43] Direct method for bipolar base-emitter and base-collector capacitance splitting using high frequency measurements PROCEEDINGS OF THE 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2001, : 114 - 117
- [44] InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, 1997, : 278 - 286
- [49] Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 962 - 967