共 50 条
- [31] TEMPERATURE-DEPENDENCE OF THE KINETICS OF PAIR RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (06): : 685 - 689
- [33] ANOMALOUS TEMPERATURE-DEPENDENCE OF RECOMBINATION RADIATION OF GALLIUM-ARSENIDE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (02): : 577 - 584
- [35] STUDIES ON AUGER RECOMBINATION LIFETIME IN HEAVILY-DOPED INGAASP PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 138 (01): : K13 - K16
- [38] PRESSURE AND TEMPERATURE-DEPENDENCE OF NH2 RECOMBINATION RATE CONSTANT JOURNAL OF PHYSICAL CHEMISTRY, 1977, 81 (03): : 210 - 214
- [39] PROBLEMS ASSOCIATED WITH MODELING OF RECOMBINATION AT DEFECTS - TEMPERATURE-DEPENDENCE OF EBIC AND CL REVUE DE PHYSIQUE APPLIQUEE, 1989, 24 (06): : 145 - 146
- [40] TEMPERATURE-DEPENDENCE OF THE QUANTUM EFFICIENCY OF RADIATIVE RECOMBINATION IN LEAD SELENIDE AND SULFIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 165 - 169