Dynamic Characteristics of Multi-Channel Metal-Induced Unilaterally Precrystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits

被引：1
|
作者：
Hwang, Wook-Jung [1 ,3 ]
Kang, Il-Suk [1 ]
Lim, Sung-Kyu [3 ]
Kim, Byeong-Il [3 ]
Yang, Jun-Mo [1 ,3 ]
Ahn, Chi-Won [1 ,3 ]
Hong, Soon-Ku [2 ]
机构：
[1] Natl Nanofab Ctr, Adv Technol Ctr Informat Elect Mat & Components, Daejoen 305806, South Korea
[2] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejoen 305764, South Korea
[3] Natl Nanofab Ctr, Daejoen 305806, South Korea
来源：
KOREAN JOURNAL OF MATERIALS RESEARCH | 2008年 / 18卷 / 09期
关键词：
metal-induced unilateral precrystallization; polycrystalline silicon thin-film transistor; multi-channel; ring oscillator;
D O I：
10.3740/MRSK.2008.18.9.507
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.
引用
收藏
页码：507 / 510
页数：4
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