EFFECT OF SCATTERING ON INTRINSIC BISTABILITY IN A RESONANT TUNNELING DIODE

被引：2
|
作者：
HU, YM
STAPLETON, S
机构：
[1] School of Engineering Science, Simon Fraser University, Burnaby
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 01期
关键词：
D O I：
10.1063/1.352135
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Intrinsic bistability in a resonant tunneling diode has been investigated theoretically using a modified resonant tunneling model. A self-consistent solution including feedback of charges in the quantum well is found through an iterative method, where the stable and unstable solutions can be easily identified. The intrinsic bistability corresponds to the existence of two stable solutions. We find that scattering will reduce the intrinsic bistability or completely eliminate it, even for a large current peak-to-valley ratio (about 19).
引用
收藏
页码：294 / 296
页数：3
相关论文
共 50 条
  • [11] Suppression of intrinsic bistability in resonant-tunneling diode by in-plane magnetic field
    Serov, AY
    Zegrya, GG
    APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [12] EXISTENCE OF INTRINSIC BISTABILITY IN RESONANT TUNNELING DIODE STUDIED BY NOVEL MONTE-CARLO TECHNIQUE
    BABA, T
    MIZUTA, M
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 807 - 812
  • [13] Resonant tunneling and intrinsic bistability in twisted graphene structures
    Rodriguez-Nieva, J. F.
    Dresselhaus, M. S.
    Levitov, L. S.
    PHYSICAL REVIEW B, 2016, 94 (08)
  • [14] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES
    GOLDMAN, VJ
    TSUI, DC
    CUNNINGHAM, JE
    PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1256 - 1259
  • [15] CHARGE TRANSPORT AND INTRINSIC BISTABILITY IN RESONANT TUNNELING STRUCTURES
    GOLDMAN, VJ
    TSUI, DC
    CUNNINGHAM, JE
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 463 - 466
  • [16] The role of emitter quasi-bound state and scattering on intrinsic bistability in resonant tunneling diodes
    Sandu, T
    Kirk, WP
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 22 (04): : 815 - 824
  • [17] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - REPLY
    GOLDMAN, VJ
    TSUI, DC
    CUNNINGHAM, JE
    PHYSICAL REVIEW LETTERS, 1987, 59 (14) : 1623 - 1623
  • [18] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT
    SOLLNER, TCLG
    PHYSICAL REVIEW LETTERS, 1987, 59 (14) : 1622 - 1622
  • [19] SUPPRESSION OF INTRINSIC BISTABILITY BY THE EXCHANGE-CORRELATION EFFECT IN RESONANT-TUNNELING STRUCTURES
    ZOU, NZ
    WILLANDER, M
    LINNERUD, I
    HANKE, U
    CHAO, KA
    GALPERIN, YM
    PHYSICAL REVIEW B, 1994, 49 (03): : 2193 - 2196
  • [20] S-shaped current bistability in a bipolar resonant tunneling diode
    Kuhn, O
    Genoe, J
    Maude, DK
    Portal, JC
    Eaves, L
    Henini, M
    Hill, G
    Pate, M
    PHYSICA E, 1998, 2 (1-4): : 483 - 488
12345