TEMPERATURE-DEPENDENCE FOR ION-INDUCED AMORPHIZATION OF NIAL

被引:7
|
作者
JAOUEN, C
RIVIERE, JP
DELAFOND, J
机构
[1] Laboratoire de Métallurgie Physique, URA 131 CNRS, Université de Poitiers, 86022 Poitiers
关键词
D O I
10.1016/0168-583X(91)95247-B
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Crystalline NiAl films of equiatomic composition were irradiated with 360 keV Xe+ ions in the temperature range 4-300 K. The amorphous volume fraction was monitored continuously as a function of ion dose from in situ electrical resistivity measurements. The experimental results indicate that the ion-induced amorphization occurs always by a direct (i.e. intracascade) mechanism. The ion dose necessary for producing complete disorder (i.e. amorphization) increases rapidly between 77 and 120 K. Above these temperatures, the amorphous volume fraction reaches a saturation value lower than 1, indicating that total amorphization is never obtained. The damage cross-sectional area decreases with increasing temperature and this behavior is analyzed by Morehead and Crowder's model. These results suggest that there is under irradiation a competition between ballistic amorphization and heterogeneous irradiation-enhanced crystallization.
引用
收藏
页码:406 / 409
页数:4
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