REFLECTION AMPLIFICATION IN THIN-LAYERS OF N-GAAS

被引：10

作者：

DEAN, RH

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 11期

关键词：

D O I：

10.1109/T-ED.1972.17567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1148 / +

页数：1

共 50 条

[31] ELECTRODE CONNECTION TO THIN-LAYERS
KRIKSHTOPAITIS, IB
PRIBORY I TEKHNIKA EKSPERIMENTA, 1974, (06): : 195 - 196
[32] BIDIMENSIONAL OPTICS IN THIN-LAYERS
VINCENT, D
LIT, JWY
CANADIAN JOURNAL OF PHYSICS, 1979, 57 (01) : 45 - 53
[33] QUALITY ASSURANCE OF THIN-LAYERS
NEUMAIER, P
METALL, 1992, 46 (03): : 241 - 244
[34] HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERS
QUEISSER, HJ
THEODOROU, DE
PHYSICAL REVIEW LETTERS, 1979, 43 (05) : 401 - 404
[35] CORRELATION BETWEEN PHOTOREFLECTANCE AND CV MEASUREMENTS OF N-GAAS EPITAXIAL LAYERS
DITTRICH, T
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 119 (02): : 479 - 485
[36] Current filament patterns in n-GaAs layers with different contact geometries
Hirschinger, J
Niedernostheide, FJ
Prettl, W
Novák, V
PHYSICAL REVIEW B, 2000, 61 (03): : 1952 - 1958
[37] CURRENT LIMITATION INDUCED BY INFRARED LIGHT IN N-TYPE GAAS THIN-LAYERS ON SEMI-INSULATING CR-DOPED GAAS
KITAHARA, K
NAKAI, K
SHIBATOMI, A
OHKAWA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 513 - 516
[38] ANALYSIS OF THIN-LAYERS BY TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY
HOFFMANN, P
LIESER, KH
HEIN, M
FLAKOWSKI, M
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1989, 44 (05) : 471 - 476
[39] COMPUTATION OF THICKNESS AND OPTICAL PROPERTIES OF THIN-LAYERS FROM REFLECTION AND TRANSMISSION SPECTRA ALONE
MULDER, BJ
PHILIPS RESEARCH REPORTS, 1972, 27 (04): : 315 - 322
[40] ELECTROMAGNETIC-WAVES AMPLIFICATION IN A WAVEGUIDE-SLOT LINE ON N-GAAS
BORISOV, VI
BRYANTSEVA, TA
GALANIN, AL
GULYAEV, YV
KEMARSKY, VA
KOROBKIN, VA
LYUBCHENKO, VE
RADIOTEKHNIKA I ELEKTRONIKA, 1981, 26 (01): : 173 - 176

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