WELL-WIDTH DEPENDENCE OF INTERSUBBAND ABSORPTION IN INGAAS/INALAS MULTIQUANTUM WELLS

被引：16
|
作者：
ASAI, H
KAWAMURA, Y
机构：
[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa 243-01
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期
关键词：
D O I：
10.1063/1.102546
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The well-width dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells grown by molecular beam epitaxy is investigated. The energies of the absorption peaks decrease from 300 to 100 meV with an increasing well width from 35 to 200 Å. This well-width dependence of the peak energy is in good agreement with theoretical calculations. For a wide quantum well, two sharp absorption peaks were observed, including the transitions from the second to the third subbands.
引用
收藏
页码：1149 / 1151
页数：3
相关论文
共 50 条
  • [21] Well-width dependence of the phase coherent photorefractive effect in ZnSe quantum wells
    Kabir, A.
    Panfilova, M.
    Pawlis, A.
    Wagner, H. P.
    Lischka, K.
    MICROELECTRONICS JOURNAL, 2009, 40 (02) : 303 - 305
  • [22] Well-width dependence of light-hole exciton dephasing in GaAs quantum wells
    Gopal, AV
    Vengurlekar, AS
    PHYSICAL REVIEW B, 2000, 62 (07): : 4624 - 4629
  • [23] Gross well-width fluctuations in InGaN quantum wells
    Oliver, R. A.
    Kappers, M. J.
    Humphreys, C. J.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1475 - +
  • [24] HIGH-TEMPERATURE HEAVY-HOLE AND LIGHT-HOLE EXCITONS AND WELL-WIDTH DEPENDENCE OF EXCITONS IN INGAAS/INALAS MULTIPLE-QUANTUM-WELL STRUCTURES
    KAWAMURA, Y
    WAKITA, K
    ASAHI, H
    ELECTRONICS LETTERS, 1985, 21 (24) : 1168 - 1169
  • [25] WELL-WIDTH DEPENDENCE OF THE EXCITONIC LIFETIME IN STRAINED III-V QUANTUM-WELLS
    AMAND, T
    MARIE, X
    DAREYS, B
    BARRAU, J
    BROUSSEAU, M
    DUNSTAN, DJ
    EMERY, JY
    GOLDSTEIN, L
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (05) : 2077 - 2079
  • [26] Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces
    Valcheva, E.
    Dimitrov, S.
    Monemar, B.
    Haratizadeh, H.
    Persson, P. O. A.
    Amano, H.
    Akasaki, I.
    ACTA PHYSICA POLONICA A, 2007, 112 (02) : 395 - 400
  • [27] Density and well-width dependence of the spin relaxation in n-InSb/AlInSb quantum wells
    Litvinenko, K. L.
    Murdin, B. N.
    Clowes, S. K.
    Nikzad, L.
    Allam, J.
    Pidgeon, C. R.
    Branford, W.
    Cohen, L. F.
    Ashley, T.
    Buckle, L.
    NARROW GAP SEMICONDUCTORS 2007, 2008, 119 : 19 - +
  • [28] Well-width dependence of radiative and nonradiative lifetimes in ZnO-based multiple quantum wells
    Chia, CH
    Makino, T
    Segawa, Y
    Kawasaki, M
    Ohtomo, A
    Tamura, K
    Koinuma, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 229 (02): : 863 - 866
  • [29] Effect of random well-width fluctuations on the exciton optical absorption spectrum in single quantum wells
    Sa-Yakanit, V
    Roussignol, P
    Slavcheva, G
    PHYSICAL REVIEW B, 2000, 62 (08): : 5079 - 5091
  • [30] WELL WIDTH DEPENDENCE OF THE CARRIER LIFE TIME IN INGAAS INP QUANTUM WELLS
    CEBULLA, U
    BACHER, G
    MAYER, G
    FORCHEL, A
    TSANG, WT
    RAZEGHI, M
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (02) : 227 - 230
12345